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| Parameter | EMX2DXV6T5 | EMX2DXV6T5G | |
|---|---|---|---|
IC package | Package | SOT-563 | |
Manufacturer | Manufacturer | ON Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Continuous collector current | IC | <100 mA | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | |
Constant power dissipated on the transistor collector | PC | <500 mW | |
Static current transfer coefficient of bipolar transistor | hFE | >120Ic, Vce = 1mA, 6V | |
Saturation voltage between collector and emitter of transistor | UCE-sat | <400 mVIb, Ic = 5mA, 50mA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <180 MHz | |
Bipolar transistor structure | Structure | NPN | |
Number of elements of the same type in single chip | Elements | 2 | |