EMT1DXV6

EMT1DXV6, EMT1DXV6T1, EMT1DXV6T1G, EMT1DXV6T5, EMT1DXV6T5G

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterEMT1DXV6T1EMT1DXV6T1GEMT1DXV6T5EMT1DXV6T5G
IC package
Package
SOT-563
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Constant power dissipated on the transistor collector
PC
<500 mW
Static current transfer coefficient of bipolar transistor
hFE
>120Ic, Vce = 1mA, 6V
Saturation voltage between collector and emitter of transistor
UCE-sat
<500 mVIb, Ic = 5mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<140 MHz
Bipolar transistor structure
Structure
PNP
Number of elements of the same type in single chip
Elements
2