BC847PNB6327

BC847PN, BC847PN-7-F, BC847PNB6327, BC847PNE6327, BC847PNE6433

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Description

Parameters

ParameterBC847PN-7-FBC847PNB6327BC847PNE6327BC847PNE6433
IC package
Package
SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
Diodes IncInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V
Constant power dissipated on the transistor collector
PC
<200 mW<250 mW<250 mW<250 mW
Static current transfer coefficient of bipolar transistor
hFE
>200.22Ic, Vce = 2mA, 5V>200Ic, Vce = 2mA, 5V>200Ic, Vce = 2mA, 5V>200Ic, Vce = 2mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
(not set)<650 mVIb, Ic = 5mA, 100mA<650 mVIb, Ic = 5mA, 100mA<650 mVIb, Ic = 5mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
(not set)<250 MHz<250 MHz<250 MHz
Bipolar transistor structure
Structure
NPN+PNP
Number of elements of the same type in single chip
Elements
2