BC847CD

BC847CD, BC847CDLP-7, BC847CDW1T1G, BC847CDXV6T1G, BC847CDXV6T5, BC847CDXV6T5G

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Description

Parameters

ParameterBC847CDLP-7BC847CDW1T1GBC847CDXV6T1GBC847CDXV6T5BC847CDXV6T5G
IC package
Package
6-DFNSC-70-6, SC-88, SOT-323-6, SOT-363SOT-563SOT-563SOT-563
Manufacturer
Manufacturer
Diodes IncON SemiconductorON SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V
Constant power dissipated on the transistor collector
PC
<350 mW<380 mW<500 mW<500 mW<500 mW
Static current transfer coefficient of bipolar transistor
hFE
>420Ic, Vce = 2mA, 5V>270Ic, Vce = 10µA, 5V>270Ic, Vce = 10µA, 5V>420Ic, Vce = 2mA, 5V>420Ic, Vce = 2mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<600 mVIb, Ic = 5mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz
Bipolar transistor structure
Structure
NPN
Collector cutoff current
Ifrc
<15 nA(not set)(not set)(not set)(not set)
Number of elements of the same type in single chip
Elements
2