BC847BV,115

BC847BV, BC847BV,115, BC847BV,315, BC847BV-7, BC847BVC-7, BC847BVN,115, BC847BVN-7

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Description

Parameters

ParameterBC847BV,115BC847BV,315BC847BV-7BC847BVC-7BC847BVN,115BC847BVN-7
IC package
Package
SS Mini-6 (SOT-666)SS Mini-6 (SOT-666)SOT-563SOT-563SS Mini-6 (SOT-666)SOT-563
Manufacturer
Manufacturer
NXP SemiconductorsNXP SemiconductorsDiodes IncDiodes IncNXP SemiconductorsDiodes Inc
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V
Constant power dissipated on the transistor collector
PC
<300 mW<200 mW<150 mW<150 mW<300 mW<150 mW
Static current transfer coefficient of bipolar transistor
hFE
>200Ic, Vce = 2mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 5mA, 100mA<300 mVIb, Ic = 5mA, 100mA<300 mVIb, Ic = 5mA, 100mA<300 mVIb, Ic = 5mA, 100mA<300 mVIb, Ic = 5mA, 100mA<200 mVIb, Ic = 5mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz<100 MHz<100 MHz<100 MHz<100 MHz<300 MHz
Bipolar transistor structure
Structure
NPNNPNNPNNPNNPN+PNPNPN+PNP
Number of elements of the same type in single chip
Elements
2