ZXTN25020BFHTA

ZXTN25020, ZXTN25020BFHTA, ZXTN25020CFH, ZXTN25020CFHTA, ZXTN25020DFHTA, ZXTN25020DFLTA, ZXTN25020DGTA, ZXTN25020DZTA

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Description

Parameters

ParameterZXTN25020BFHTAZXTN25020CFHZXTN25020CFHTAZXTN25020DFHTAZXTN25020DFLTAZXTN25020DGTAZXTN25020DZTA
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-223 (3 leads + Tab), SC-73, TO-261AASOT-89-3, TO-243-3
Manufacturer
Manufacturer
Diodes/Zetex
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<4.5 A<4.5 A<4.5 A<4.5 A<2 A<7 A<6 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<20 V
Constant power dissipated on the transistor collector
PC
<1.05 W<1.05 W<1.25 W<1.05 W<350 mW<3 W<2.4 W
Static current transfer coefficient of bipolar transistor
hFE
>100Ic, Vce = 10mA, 2V>200Ic, Vce = 10mA, 2V>200Ic, Vce = 10mA, 2V>300Ic, Vce = 10mA, 2V>300Ic, Vce = 10mA, 2V>300Ic, Vce = 10mA, 2V>300Ic, Vce = 10mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<45 mVIb, Ic = 100mA, 1A<45 mVIb, Ic = 100mA, 1A<45 mVIb, Ic = 100mA, 1A<43 mVIb, Ic = 100mA, 1A<70 mVIb, Ic = 100mA, 1A<180 mVIb, Ic = 20mA, 2A<180 mVIb, Ic = 20mA, 2A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<185 MHz<185 MHz<185 MHz<215 MHz<215 MHz<215 MHz<215 MHz
Bipolar transistor structure
Structure
NPN