PZT2907A,115

PZT2907, PZT2907A, PZT2907A,115, PZT2907A,135, PZT2907AT1, PZT2907AT1G, PZT2907AT3, PZT2907AT3G

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Description

Parameters

ParameterPZT2907APZT2907A,115PZT2907A,135PZT2907AT1PZT2907AT1GPZT2907AT3PZT2907AT3G
IC package
Package
SOT-223 (3 leads + Tab), SC-73, TO-261AA
Manufacturer
Manufacturer
Fairchild SemiconductorNXP SemiconductorsNXP SemiconductorsON SemiconductorON SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<800 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Constant power dissipated on the transistor collector
PC
<1 W<1.15 W<1.15 W<1.5 W<1.5 W<1.5 W<1.5 W
Static current transfer coefficient of bipolar transistor
hFE
>100Ic, Vce = 150mA, 10V>75Ic, Vce = 100µA, 10V>75Ic, Vce = 100µA, 10V>100Ic, Vce = 150mA, 10V>100Ic, Vce = 150mA, 10V>100Ic, Vce = 150mA, 10V>100Ic, Vce = 150mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<1.6 VIb, Ic = 50mA, 500mA<400 mVIb, Ic = 15mA, 150mA<400 mVIb, Ic = 15mA, 150mA<400 mVIb, Ic = 15mA, 150mA<400 mVIb, Ic = 15mA, 150mA<400 mVIb, Ic = 15mA, 150mA<400 mVIb, Ic = 15mA, 150mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Bipolar transistor structure
Structure
PNP