PBSS8110AS,126

PBSS8110, PBSS8110AS,126, PBSS8110D,115, PBSS8110S,126, PBSS8110T,215, PBSS8110X,135, PBSS8110Y,115, PBSS8110Z,135

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Description

Parameters

ParameterPBSS8110AS,126PBSS8110D,115PBSS8110S,126PBSS8110T,215PBSS8110X,135PBSS8110Y,115PBSS8110Z,135
IC package
Package
TO-92-3 (Standard Body), TO-226SC-74-6TO-92-3 (Standard Body), TO-226SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-62, SOT-89, MPT3 (3 leads + Tab)SC-70-6, SC-88, SOT-323-6, SOT-363SOT-223 (3 leads + Tab), SC-73, TO-261AA
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mountThrough-holeSurface mountSurface mountSurface mountSurface mount
Continuous collector current
IC
<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V<100 V<100 V<100 V<100 V<10 V<100 V
Constant power dissipated on the transistor collector
PC
<830 mW<700 mW<830 mW<300 mW<1.4 W<480 mW<1 W
Static current transfer coefficient of bipolar transistor
hFE
>150Ic, Vce = 1mA, 10V>150Ic, Vce = 1mA, 5V>150Ic, Vce = 1mA, 10V>150Ic, Vce = 1mA, 10V>150Ic, Vce = 1mA, 10V>150Ic, Vce = 1mA, 10V>150Ic, Vce = 1mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<40 mVIb, Ic = 10mA, 100mA<120 mVIb, Ic = 25mA, 250mA<40 mVIb, Ic = 10mA, 100mA<120 mVIb, Ic = 50mA, 500mA<40 mVIb, Ic = 10mA, 100mA<40 mVIb, Ic = 10mA, 100mA<40 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz
Bipolar transistor structure
Structure
NPNPNPNPNNPNNPNNPNPNP
Collector cutoff current
Ifrc
<100 nA<100 nA<100 nA<100 nA<100 nA(not set)<100 nA