PBSS5220T,215

PBSS5220, PBSS5220T,215, PBSS5220V,115

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Description

Parameters

ParameterPBSS5220T,215PBSS5220V,115
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SS Mini-6 (SOT-666)
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<2 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<20 V
Constant power dissipated on the transistor collector
PC
<480 mW<500 mW
Static current transfer coefficient of bipolar transistor
hFE
>225Ic, Vce = 100mA, 2V>220Ic, Vce = 1mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<80 mVIb, Ic = 50mA, 500mA<80 mVIb, Ic = 1mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz<185 MHz
Bipolar transistor structure
Structure
PNP
Collector cutoff current
Ifrc
(not set)<100 nA