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| Parameter | PBSS5160K,115 | PBSS5160T,215 | PBSS5160U,115 | PBSS5160V,115 | |
|---|---|---|---|---|---|
IC package | Package | SC-59-3, SMT3, SOT-346, TO-236 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SC-70-3, SOT-323-3 | SS Mini-6 (SOT-666) |
Manufacturer | Manufacturer | NXP Semiconductors | |||
Type of mounting a component on a board/circuit | Mount | Surface mount | |||
Continuous collector current | IC | <860 mA | <1 A | <930 mA | <1 A |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <60 V | |||
Constant power dissipated on the transistor collector | PC | <350 mW | <270 mW | <350 mW | <500 mW |
Static current transfer coefficient of bipolar transistor | hFE | >200Ic, Vce = 1mA, 5V | >200Ic, Vce = 1mA, 5V | >250Ic, Vce = 1mA, 5V | >200Ic, Vce = 1mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <175 mVIb, Ic = 1mA, 100mA | <160 mVIb, Ic = 1mA, 100mA | <115 mVIb, Ic = 1mA, 100mA | <160 mVIb, Ic = 1mA, 100mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <185 MHz | <220 MHz | <220 MHz | <220 MHz |
Bipolar transistor structure | Structure | PNP | |||
Collector cutoff current | Ifrc | <100 nA | |||