PBSS4350D,135

PBSS4350, PBSS4350D,115, PBSS4350D,135, PBSS4350S,126, PBSS4350T,215, PBSS4350X,115, PBSS4350X,135, PBSS4350X,146, PBSS4350X,147, PBSS4350Z,135

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Description

Parameters

ParameterPBSS4350D,115PBSS4350D,135PBSS4350S,126PBSS4350T,215PBSS4350X,115PBSS4350X,135PBSS4350X,146PBSS4350X,147PBSS4350Z,135
IC package
Package
SC-74-6SC-74-6TO-92-3 (Standard Body), TO-226SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-62, SOT-89, MPT3 (3 leads + Tab)SC-62, SOT-89, MPT3 (3 leads + Tab)SC-62, SOT-89, MPT3 (3 leads + Tab)SC-62, SOT-89, MPT3 (3 leads + Tab)SOT-223 (3 leads + Tab), SC-73, TO-261AA
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mountSurface mountThrough-holeSurface mountSurface mountSurface mountSurface mountSurface mountSurface mount
Continuous collector current
IC
<3 A<3 A<3 A<2 A<3 A<3 A<3 A<3 A<3 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<750 mW<750 mW<830 mW<480 mW<1.4 W<1.4 W<1.6 W<1.6 W<2 W
Static current transfer coefficient of bipolar transistor
hFE
>200Ic, Vce = 500mA, 2V>200Ic, Vce = 500mA, 2V>200Ic, Vce = 500mA, 2V>300Ic, Vce = 100mA, 2V>300Ic, Vce = 100mA, 2V>300Ic, Vce = 100mA, 2V>300Ic, Vce = 1A, 2V>300Ic, Vce = 1A, 2V>200Ic, Vce = 500mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<90 mVIb, Ic = 50mA, 500mA<90 mVIb, Ic = 50mA, 500mA<90 mVIb, Ic = 50mA, 500mA<80 mVIb, Ic = 50mA, 500mA<80 mVIb, Ic = 50mA, 500mA<80 mVIb, Ic = 50mA, 500mA<370 mVIb, Ic = 300mA, 3A<370 mVIb, Ic = 300mA, 3A<90 mVIb, Ic = 50mA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz<100 MHz<100 MHz<100 MHz<100 MHz<100 MHz(not set)(not set)<100 MHz
Bipolar transistor structure
Structure
NPN
Collector cutoff current
Ifrc
(not set)(not set)(not set)(not set)<100 nA<100 nA(not set)(not set)(not set)