PBSS4160K,115

PBSS4160, PBSS4160K,115, PBSS4160T,215, PBSS4160U,115, PBSS4160V,115

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Description

Parameters

ParameterPBSS4160K,115PBSS4160T,215PBSS4160U,115PBSS4160V,115
IC package
Package
SC-59-3, SMT3, SOT-346, TO-236SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-70-3, SOT-323-3SS Mini-6 (SOT-666)
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Constant power dissipated on the transistor collector
PC
<350 mW<270 mW<350 mW<500 mW
Static current transfer coefficient of bipolar transistor
hFE
>250Ic, Vce = 1mA, 5V>400Ic, Vce = 1mA, 5V>250Ic, Vce = 1mA, 5V>250Ic, Vce = 1mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<115 mVIb, Ic = 1mA, 100mA<110 mVIb, Ic = 1mA, 100mA<115 mVIb, Ic = 1mA, 100mA<110 mVIb, Ic = 1mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<220 MHz
Bipolar transistor structure
Structure
NPN
Collector cutoff current
Ifrc
<100 nA