PBSS4140T,215

PBSS4140, PBSS4140S,126, PBSS4140T,215, PBSS4140T,235, PBSS4140U,115, PBSS4140U,135, PBSS4140V,115

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterPBSS4140S,126PBSS4140T,215PBSS4140T,235PBSS4140U,115PBSS4140U,135PBSS4140V,115
IC package
Package
TO-92-3 (Standard Body), TO-226SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-70-3, SOT-323-3SC-70-3, SOT-323-3SS Mini-6 (SOT-666)
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mountSurface mountSurface mountSurface mountSurface mount
Continuous collector current
IC
<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<40 V
Constant power dissipated on the transistor collector
PC
<830 mW<450 mW<450 mW<350 mW<350 mW<500 mW
Static current transfer coefficient of bipolar transistor
hFE
>300Ic, Vce = 1mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<200 mVIb, Ic = 1mA, 100mA<200 mVIb, Ic = 1mA, 100mA<200 mVIb, Ic = 1mA, 100mA<200 mVIb, Ic = 1mA, 100mA<200 mVIb, Ic = 1mA, 100mA<140 mVIb, Ic = 1mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<150 MHz
Bipolar transistor structure
Structure
NPNNPNNPNNPNNPNPNP
Collector cutoff current
Ifrc
<100 nA