PBSS305NX,115

PBSS305, PBSS305ND,115, PBSS305NX,115, PBSS305NZ,135, PBSS305PD,115, PBSS305PX,115, PBSS305PZ,135

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Description

Parameters

ParameterPBSS305ND,115PBSS305NX,115PBSS305NZ,135PBSS305PD,115PBSS305PX,115PBSS305PZ,135
IC package
Package
SC-74-6SC-62, SOT-89, MPT3 (3 leads + Tab)SOT-223 (3 leads + Tab), SC-73, TO-261AASC-74-6SC-62, SOT-89, MPT3 (3 leads + Tab)SOT-223 (3 leads + Tab), SC-73, TO-261AA
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<3 A<4.6 A<5.1 A<2 A<4 A<4.5 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V<80 V<80 V<100 V<80 V<80 V
Constant power dissipated on the transistor collector
PC
<750 mW<1.65 W<1.7 W<750 mW<1.65 W<1.7 W
Static current transfer coefficient of bipolar transistor
hFE
>170Ic, Vce = 500mA, 2V>300Ic, Vce = 500mA, 2V>300Ic, Vce = 500mA, 2V>175Ic, Vce = 500mA, 2V>200Ic, Vce = 500mA, 2V>200Ic, Vce = 500mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<60 mVIb, Ic = 50mA, 500mA<40 mVIb, Ic = 50mA, 500mA<40 mVIb, Ic = 50mA, 500mA<90 mVIb, Ic = 50mA, 500mA<50 mVIb, Ic = 50mA, 500mA<50 mVIb, Ic = 50mA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<140 MHz<110 MHz<110 MHz<110 MHz<100 MHz<100 MHz
Bipolar transistor structure
Structure
NPNNPNNPNPNPPNPPNP
Collector cutoff current
Ifrc
<100 nA(not set)(not set)<100 nA(not set)(not set)