PBSS304NX,115

PBSS304, PBSS304ND,115, PBSS304NX,115, PBSS304NZ,135, PBSS304PD,115, PBSS304PX,115, PBSS304PZ,135

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Description

Parameters

ParameterPBSS304ND,115PBSS304NX,115PBSS304NZ,135PBSS304PD,115PBSS304PX,115PBSS304PZ,135
IC package
Package
SC-74-6SC-62, SOT-89, MPT3 (3 leads + Tab)SOT-223 (3 leads + Tab), SC-73, TO-261AASC-74-6SC-62, SOT-89, MPT3 (3 leads + Tab)SOT-223 (3 leads + Tab), SC-73, TO-261AA
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<1 A<4.7 A(not set)<3 A<4.2 A<4.5 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<80 V<60 V<60 V<80 V<60 V<60 V
Constant power dissipated on the transistor collector
PC
<750 mW<1.65 W<2 W<1.65 W<1.65 W<2 W
Static current transfer coefficient of bipolar transistor
hFE
>240Ic, Vce = 500mA, 2V>300Ic, Vce = 500mA, 2V>300Ic, Vce = 1A, 2V>200Ic, Vce = 500mA, 2V>200Ic, Vce = 500mA, 2V>200Ic, Vce = 1A, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<55 mVIb, Ic = 50mA, 500mA<35 mVIb, Ic = 50mA, 500mA<220 mVIb, Ic = 200mA, 4A<50 mVIb, Ic = 50mA, 500mA<50 mVIb, Ic = 50mA, 500mA<300 mVIb, Ic = 200mA, 4A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<140 MHz<130 MHz<130 MHz<130 MHz<130 MHz<130 MHz
Bipolar transistor structure
Structure
NPNNPNNPNPNPPNPPNP
Collector cutoff current
Ifrc
<100 nA(not set)(not set)(not set)(not set)(not set)