PBSS302

PBSS302, PBSS302ND,115, PBSS302NX,115, PBSS302NZ,135, PBSS302PD,115, PBSS302PX,115, PBSS302PZ,135

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterPBSS302ND,115PBSS302NX,115PBSS302NZ,135PBSS302PD,115PBSS302PX,115PBSS302PZ,135
IC package
Package
SC-74-6SC-62, SOT-89, MPT3 (3 leads + Tab)SOT-223 (3 leads + Tab), SC-73, TO-261AASC-74-6SC-62, SOT-89, MPT3 (3 leads + Tab)SOT-223 (3 leads + Tab), SC-73, TO-261AA
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<4 A<5.3 A<5.8 A<4 A<5.1 A<5.5 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<40 V<20 V<20 V<40 V<20 V<20 V
Constant power dissipated on the transistor collector
PC
<750 mW<1.65 W<1.7 W<750 mW<1.65 W<700 mW
Static current transfer coefficient of bipolar transistor
hFE
>300Ic, Vce = 500mA, 2V>300Ic, Vce = 500mA, 2V>300Ic, Vce = 500mA, 2V>200Ic, Vce = 500mA, 2V>250Ic, Vce = 500mA, 2V>345Ic, Vce = 500mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<60 mVIb, Ic = 50mA, 500mA<25 mVIb, Ic = 50mA, 500mA<25 mVIb, Ic = 50mA, 500mA<60 mVIb, Ic = 50mA, 500mA<35 mVIb, Ic = 50mA, 500mA<55 mVIb, Ic = 50mA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<150 MHz<150 MHz<140 MHz<110 MHz<130 MHz<140 MHz
Bipolar transistor structure
Structure
NPNNPNNPNPNPPNPPNP
Collector cutoff current
Ifrc
<100 nA(not set)(not set)<100 nA(not set)<100 nA