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| Parameter | PBSS2515E,115 | PBSS2515M,315 | |
|---|---|---|---|
IC package | Package | EMT3 (SOT-416, SC-75-3) | SC-101, SOT-883 |
Manufacturer | Manufacturer | NXP Semiconductors | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Continuous collector current | IC | <500 mA | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | |
Constant power dissipated on the transistor collector | PC | <150 mW | <430 mW |
Static current transfer coefficient of bipolar transistor | hFE | >200Ic, Vce = 10mA, 2V | |
Saturation voltage between collector and emitter of transistor | UCE-sat | <25 mVIb, Ic = 500µA, 10mA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <420 MHz | |
Bipolar transistor structure | Structure | NPN | |