NSS40200LT1G

NSS40200, NSS40200LT1G, NSS40200UW6T1G

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Description

Parameters

ParameterNSS40200LT1GNSS40200UW6T1G
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST36-WDFN
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<2 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<40 V
Constant power dissipated on the transistor collector
PC
<460 mW<1.5 W
Static current transfer coefficient of bipolar transistor
hFE
>220Ic, Vce = 500mA, 2V>150Ic, Vce = 500mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<170 mVIb, Ic = 10mA, 1A<300 mVIb, Ic = 20mA, 2A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz<140 MHz
Bipolar transistor structure
Structure
PNP