NSS12200

NSS12200, NSS12200LT1G, NSS12200WT1G

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Description

Parameters

ParameterNSS12200LT1GNSS12200WT1G
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<2 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<12 V
Constant power dissipated on the transistor collector
PC
<460 mW<650 mW
Static current transfer coefficient of bipolar transistor
hFE
>250Ic, Vce = 500mA, 2V>100Ic, Vce = 800mA, 1.5 V
Saturation voltage between collector and emitter of transistor
UCE-sat
<120 mVIb, Ic = 10mA, 1A<290 mVIb, Ic = 20mA, 1A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz
Bipolar transistor structure
Structure
PNP
Collector cutoff current
Ifrc
(not set)<100 nA