NSS12100UW3TCG

NSS12100, NSS12100M3T5G, NSS12100UW3TCG, NSS12100XV6T1G

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Description

Parameters

ParameterNSS12100M3T5GNSS12100UW3TCGNSS12100XV6T1G
IC package
Package
SOT-7233-WDFNSOT-563
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<12 V
Constant power dissipated on the transistor collector
PC
<625 mW<740 mW<650 mW
Static current transfer coefficient of bipolar transistor
hFE
>80Ic, Vce = 1A, 2V>100Ic, Vce = 500mA, 2V>90Ic, Vce = 1A, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<410 mVIb, Ic = 100mA, 1A<200 mVIb, Ic = 50mA, 500mA<440 mVIb, Ic = 100mA, 1A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
(not set)<200 MHz(not set)
Bipolar transistor structure
Structure
PNP