MSB92ASWT1

MSB92, MSB92ASWT1, MSB92ASWT1G, MSB92AWT1G, MSB92T1, MSB92T1G, MSB92WT1, MSB92WT1G

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Description

Parameters

ParameterMSB92ASWT1MSB92ASWT1GMSB92AWT1GMSB92T1MSB92T1GMSB92WT1MSB92WT1G
IC package
Package
SC-70-3, SOT-323-3SC-70-3, SOT-323-3SC-70-3, SOT-323-3SC-59-3, SMT3, SOT-346, TO-236SC-59-3, SMT3, SOT-346, TO-236SC-70-3, SOT-323-3SC-70-3, SOT-323-3
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<500 mA<500 mA<500 mA<150 mA<150 mA<500 mA<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<300 V
Constant power dissipated on the transistor collector
PC
<150 mW
Static current transfer coefficient of bipolar transistor
hFE
>120Ic, Vce = 1mA, 10V>120Ic, Vce = 1mA, 10V>120Ic, Vce = 1mA, 10V>25Ic, Vce = 1mA, 10V>25Ic, Vce = 1mA, 10V>25Ic, Vce = 1mA, 10V>25Ic, Vce = 1mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<500 mVIb, Ic = 2mA, 20mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<50 MHz
Bipolar transistor structure
Structure
PNP