MSA1162GT1G

MSA1162, MSA1162GT1, MSA1162GT1G, MSA1162YT1, MSA1162YT1G

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Description

Parameters

ParameterMSA1162GT1MSA1162GT1GMSA1162YT1MSA1162YT1G
IC package
Package
SC-59-3, SMT3, SOT-346, TO-236
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<200 mW
Static current transfer coefficient of bipolar transistor
hFE
>200Ic, Vce = 2mA, 6V>200Ic, Vce = 2mA, 6V>120Ic, Vce = 2mA, 6V>120Ic, Vce = 2mA, 6V
Saturation voltage between collector and emitter of transistor
UCE-sat
<500 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<80 MHz
Bipolar transistor structure
Structure
PNP
Collector cutoff current
Ifrc
<100 nA