MRF5812GR1

MRF5812, MRF5812GR1, MRF5812R2

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Description

Parameters

ParameterMRF5812GR1MRF5812R2
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<200 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<15 V
Constant power dissipated on the transistor collector
PC
<1.25 W
Static current transfer coefficient of bipolar transistor
hFE
>50Ic, Vce = 50mA, 5V
Bipolar transistor structure
Structure
NPN