MPSA56_D27Z

MPSA56, MPSA56,116, MPSA56_D26Z, MPSA56_D27Z, MPSA56_D74Z, MPSA56_D75Z, MPSA56G, MPSA56RA, MPSA56RLRA, MPSA56RLRAG, MPSA56RLRMG, MPSA56RLRPG, MPSA56ZL1G

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Description

Parameters

ParameterMPSA56,116MPSA56_D26ZMPSA56_D27ZMPSA56_D74ZMPSA56_D75ZMPSA56GMPSA56RAMPSA56RLRAMPSA56RLRAGMPSA56RLRMGMPSA56RLRPGMPSA56ZL1G
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
NXP SemiconductorsFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorFairchild SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<80 V
Constant power dissipated on the transistor collector
PC
<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<1.5 W<625 mW<625 mW
Static current transfer coefficient of bipolar transistor
hFE
>100Ic, Vce = 10mA, 1V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 10mA, 100mA<200 mVIb, Ic = 10mA, 100mA<200 mVIb, Ic = 10mA, 100mA<200 mVIb, Ic = 10mA, 100mA<200 mVIb, Ic = 10mA, 100mA<250 mVIb, Ic = 10mA, 100mA<200 mVIb, Ic = 10mA, 100mA<250 mVIb, Ic = 10mA, 100mA<250 mVIb, Ic = 10mA, 100mA<250 mVIb, Ic = 10mA, 100mA<250 mVIb, Ic = 10mA, 100mA<250 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<50 MHz
Bipolar transistor structure
Structure
PNP
Collector cutoff current
Ifrc
<100 nA