MPSA18_D27Z

MPSA18, MPSA18_D26Z, MPSA18_D27Z, MPSA18_D74Z, MPSA18_D75Z, MPSA18G, MPSA18RLRA, MPSA18RLRAG, MPSA18RLRM, MPSA18RLRMG, MPSA18RLRP, MPSA18RLRPG

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Description

Parameters

Parameter		MPSA18_D26Z	MPSA18_D27Z	MPSA18_D74Z	MPSA18_D75Z	MPSA18G	MPSA18RLRA	MPSA18RLRAG	MPSA18RLRM	MPSA18RLRMG	MPSA18RLRP	MPSA18RLRPG
IC package	Package	TO-92-3 (Standard Body), TO-226
Manufacturer	Manufacturer	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
Type of mounting a component on a board/circuit	Mount	Through-hole
Continuous collector current	I_C	<100 mA	<100 mA	<100 mA	<100 mA	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<45 V
Constant power dissipated on the transistor collector	P_C	<625 mW
Static current transfer coefficient of bipolar transistor	hFE	>500Ic, Vce = 10mA, 5V	>500Ic, Vce = 10mA, 5V	>500Ic, Vce = 10mA, 5V	>500Ic, Vce = 10mA, 5V	>400Ic, Vce = 10µA, 5V	>400Ic, Vce = 10µA, 5V	>400Ic, Vce = 10µA, 5V	>400Ic, Vce = 10µA, 5V	>400Ic, Vce = 10µA, 5V	>400Ic, Vce = 10µA, 5V	>400Ic, Vce = 10µA, 5V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<300 mVIb, Ic = 5mA, 50mA	<300 mVIb, Ic = 5mA, 50mA	<300 mVIb, Ic = 5mA, 50mA	<300 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<100 MHz	<100 MHz	<100 MHz	<100 MHz	<160 MHz	<160 MHz	<160 MHz	<160 MHz	<160 MHz	<160 MHz	<160 MHz
Bipolar transistor structure	Structure	NPN