MMBTA14

MMBTA14, MMBTA14-7, MMBTA14-7-F, MMBTA14_D87Z, MMBTA14LT1, MMBTA14LT1G, MMBTA14-TP

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Description

Parameters

ParameterMMBTA14-7MMBTA14-7-FMMBTA14_D87ZMMBTA14LT1MMBTA14LT1GMMBTA14-TP
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23
Manufacturer
Manufacturer
Diodes IncDiodes IncFairchild SemiconductorInfineon TechnologiesON SemiconductorMicro Commercial Co
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<300 mA<300 mA<1.2 A<300 mA<300 mA<300 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<30 V
Constant power dissipated on the transistor collector
PC
<300 mW<300 mW<350 mW<330 mW<225 mW<225 mW
Static current transfer coefficient of bipolar transistor
hFE
>10000Ic, Vce = 10mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<1.5 VIb, Ic = 100µA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<125 MHz
Bipolar transistor structure
Structure
NPN Darlington