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| Parameter | MMBT4126-7 | MMBT4126-7-F | MMBT4126LT1 | MMBT4126LT1G | MMBT4126LT3G | |
|---|---|---|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | ||||
Manufacturer | Manufacturer | Diodes Inc | Diodes Inc | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount | ||||
Continuous collector current | IC | <200 mA | ||||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <25 V | ||||
Constant power dissipated on the transistor collector | PC | <300 mW | <300 mW | <225 mW | <300 mW | <225 mW |
Static current transfer coefficient of bipolar transistor | hFE | >120Ic, Vce = 2mA, 1V | ||||
Saturation voltage between collector and emitter of transistor | UCE-sat | <400 mVIb, Ic = 5mA, 50mA | ||||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <250 MHz | ||||
Bipolar transistor structure | Structure | PNP | ||||