MMBT3906_NL

MMBT3906, MMBT3906,215, MMBT3906-7, MMBT3906-7-F, MMBT3906_D87Z, MMBT3906K, MMBT3906LT1, MMBT3906LT1G, MMBT3906LT3G, MMBT3906_NL, MMBT3906SL, MMBT3906T, MMBT3906T-7, MMBT3906T-7-F, MMBT3906-TP, MMBT3906TT1G, MMBT3906T-TP, MMBT3906WT1, MMBT3906WT1G

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Description

Parameters

Parameter		MMBT3906,215	MMBT3906-7	MMBT3906-7-F	MMBT3906_D87Z	MMBT3906K	MMBT3906LT1	MMBT3906LT1G	MMBT3906LT3G	MMBT3906_NL	MMBT3906SL	MMBT3906T	MMBT3906T-7	MMBT3906T-7-F	MMBT3906-TP	MMBT3906TT1G	MMBT3906T-TP	MMBT3906WT1	MMBT3906WT1G
IC package	Package	SOT-23-3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, SOT-23	SOT-23-3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, SOT-923F	SOT-23-3, SOT-523F	SOT-23-3, SOT-523	SOT-23-3, SOT-523	SOT-23-3, SOT-23	SOT-23-3, SC-75-3, SOT-416, EMT3, 3-SSMini	SOT-23-3, SOT-523	SOT-23-3, SC-70-3, SOT-323-3	SOT-23-3, SC-70-3, SOT-323-3
Manufacturer	Manufacturer	NXP Semiconductors	Diodes Inc	Diodes Inc	Fairchild Semiconductor	Fairchild Semiconductor	Infineon Technologies	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Diodes Inc	Diodes Inc	Micro Commercial Co	ON Semiconductor	Micro Commercial Co	ON Semiconductor	ON Semiconductor
Type of mounting a component on a board/circuit	Mount	Surface mount
Continuous collector current	I_C	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA	<200 mA	<100 mA	<200 mA	<200 mA	<200 mA	<200 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<40 V
Constant power dissipated on the transistor collector	P_C	<250 mW	<300 mW	<300 mW	<350 mW	<350 mW	<250 mW	<225 mW	<225 mW	<350 mW	<227 mW	<250 mW	<150 mW	<150 mW	<350 mW	<200 mW	<150 mW	<150 mW	<150 mW
Static current transfer coefficient of bipolar transistor	hFE	>100Ic, Vce = 10mA, 1V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<250 mVIb, Ic = 1mA, 10mA	<400 mVIb, Ic = 5mA, 50mA	<400 mVIb, Ic = 5mA, 50mA	<400 mVIb, Ic = 5mA, 50mA	<400 mVIb, Ic = 5mA, 50mA	<400 mVIb, Ic = 5mA, 50mA	<250 mVIb, Ic = 1mA, 10mA	<250 mVIb, Ic = 1mA, 10mA	<400 mVIb, Ic = 5mA, 50mA	<400 mVIb, Ic = 5mA, 50mA	<400 mVIb, Ic = 5mA, 50mA	<400 mVIb, Ic = 5mA, 50mA	<400 mVIb, Ic = 5mA, 50mA	<250 mVIb, Ic = 1mA, 10mA	<250 mVIb, Ic = 1mA, 10mA	<250 mVIb, Ic = 1mA, 10mA	<250 mVIb, Ic = 1mA, 10mA	<250 mVIb, Ic = 1mA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<250 MHz
Bipolar transistor structure	Structure	PNP
Collector cutoff current	I_frc	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	<50 nA	(not set)	(not set)	(not set)	(not set)