MMBT2369ALT1

MMBT2369, MMBT2369A, MMBT2369ALT1, MMBT2369ALT1G, MMBT2369ALT3G, MMBT2369LT1, MMBT2369LT1G, MMBT2369LT3G

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Description

Parameters

ParameterMMBT2369AMMBT2369ALT1MMBT2369ALT1GMMBT2369ALT3GMMBT2369LT1MMBT2369LT1GMMBT2369LT3G
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
Fairchild SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<200 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<15 V
Constant power dissipated on the transistor collector
PC
<225 mW
Static current transfer coefficient of bipolar transistor
hFE
>40Ic, Vce = 10mA, 1V>40Ic, Vce = 10mA, 350mV>40Ic, Vce = 10mA, 350mV>40Ic, Vce = 10mA, 350mV>40Ic, Vce = 10mA, 350mV>40Ic, Vce = 10mA, 350mV>40Ic, Vce = 10mA, 350mV
Saturation voltage between collector and emitter of transistor
UCE-sat
<500 mVIb, Ic = 10mA, 100mA<200 mVIb, Ic = 1mA, 10mA<200 mVIb, Ic = 1mA, 10mA<200 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 1mA, 10mA<250 mVIb, Ic = 1mA, 10mA
Bipolar transistor structure
Structure
NPN