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| Parameter | MJD6039T4 | MJD6039T4G | |
|---|---|---|---|
IC package | Package | DPak, TO-252 (2 leads+tab), SC-63 | |
Manufacturer | Manufacturer | ON Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Continuous collector current | IC | <4 A | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <80 V | |
Constant power dissipated on the transistor collector | PC | <20 W | |
Static current transfer coefficient of bipolar transistor | hFE | >1000Ic, Vce = 1A, 4V | |
Saturation voltage between collector and emitter of transistor | UCE-sat | <2.5 VIb, Ic = 8mA, 2A | |
Bipolar transistor structure | Structure | NPN Darlington | |
Collector cutoff current | Ifrc | <10 µA | |