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| Parameter | MJD5731T4 | MJD5731T4G | |
|---|---|---|---|
IC package | Package | DPak, TO-252 (2 leads+tab), SC-63 | |
Manufacturer | Manufacturer | ON Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Continuous collector current | IC | <1 A | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <350 V | |
Constant power dissipated on the transistor collector | PC | <15 W | |
Static current transfer coefficient of bipolar transistor | hFE | >30Ic, Vce = 300mA, 10V | |
Saturation voltage between collector and emitter of transistor | UCE-sat | <1 VIb, Ic = 200mA, 1A | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <10 MHz | |
Bipolar transistor structure | Structure | PNP | |
Collector cutoff current | Ifrc | <100 µA | |