MJD44E3T4G

MJD44, MJD44E3T4, MJD44E3T4G, MJD44H11, MJD44H11-001, MJD44H11-1G, MJD44H11G, MJD44H11RL, MJD44H11RLG, MJD44H11T4, MJD44H11T4G, MJD44H11T5, MJD44H11T5G, MJD44H11TF, MJD44H11TM

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Description

Parameters

ParameterMJD44E3T4MJD44E3T4GMJD44H11MJD44H11-001MJD44H11-1GMJD44H11GMJD44H11RLMJD44H11RLGMJD44H11T4MJD44H11T4GMJD44H11T5MJD44H11T5GMJD44H11TFMJD44H11TM
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63IPak, TO-251, DPak, VPak (3 straight leads + tab)IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorFairchild SemiconductorFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mountSurface mountSurface mountThrough-holeThrough-holeSurface mountSurface mountSurface mountSurface mountSurface mountSurface mountSurface mountSurface mountSurface mount
Continuous collector current
IC
<10 A<10 A<8 A<8 A<8 A<8 A<8 A<8 A<8 A<8 A<8 A<8 A<8 A<8 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<80 V
Constant power dissipated on the transistor collector
PC
<20 W<20 W<20 W<20 W<20 W<20 W<20 W<20 W<20 W<20 W<20 W<20 W<1.75 W<1.75 W
Static current transfer coefficient of bipolar transistor
hFE
>1000Ic, Vce = 5A, 5V>1000Ic, Vce = 5A, 5V>60Ic, Vce = 2A, 1V>60Ic, Vce = 2A, 1V>60Ic, Vce = 2A, 1V>60Ic, Vce = 2A, 1V>60Ic, Vce = 2A, 1V>60Ic, Vce = 2A, 1V>60Ic, Vce = 2A, 1V>60Ic, Vce = 2A, 1V>60Ic, Vce = 2A, 1V>60Ic, Vce = 2A, 1V>40Ic, Vce = 4A, 1V>40Ic, Vce = 4A, 1V
Saturation voltage between collector and emitter of transistor
UCE-sat
<1.5 VIb, Ic = 10mA, 5A<1.5 VIb, Ic = 10mA, 5A<1 VIb, Ic = 400mA, 8A<1 VIb, Ic = 400mA, 8A<1 VIb, Ic = 400mA, 8A<1 VIb, Ic = 400mA, 8A<1 VIb, Ic = 400mA, 8A<1 VIb, Ic = 400mA, 8A<1 VIb, Ic = 400mA, 8A<1 VIb, Ic = 400mA, 8A<1 VIb, Ic = 400mA, 8A<1 VIb, Ic = 400mA, 8A<1 VIb, Ic = 400mA, 8A<1 VIb, Ic = 400mA, 8A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
(not set)(not set)<85 MHz<85 MHz<85 MHz<85 MHz<85 MHz<85 MHz<85 MHz<85 MHz<85 MHz<85 MHz<50 MHz<50 MHz
Bipolar transistor structure
Structure
NPN DarlingtonNPN DarlingtonNPNNPNNPNNPNNPNNPNNPNNPNNPNNPNNPNNPN
Collector cutoff current
Ifrc
<10 µA<10 µA<1 µA<1 µA<1 µA<1 µA<1 µA<1 µA<1 µA<1 µA<1 µA<1 µA<10 µA<10 µA