MJD350T4

MJD350, MJD350G, MJD350T4, MJD350T4G, MJD350TF

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Description

Parameters

ParameterMJD350GMJD350T4MJD350T4GMJD350TF
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON SemiconductorSTMicroelectronicsON SemiconductorFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<300 V
Constant power dissipated on the transistor collector
PC
<15 W<15 W<15 W<1.56 W
Static current transfer coefficient of bipolar transistor
hFE
>30Ic, Vce = 50mA, 10V
Bipolar transistor structure
Structure
PNP
Collector cutoff current
Ifrc
<100 µA