MJD32CG

MJD32, MJD32C, MJD32CG, MJD32CRL, MJD32CRLG, MJD32CT4, MJD32CT4-A, MJD32CT4G, MJD32CTF, MJD32CTF_NBDD002, MJD32CTM, MJD32RLG, MJD32T4, MJD32T4G

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Description

Parameters

Parameter		MJD32C	MJD32CG	MJD32CRL	MJD32CRLG	MJD32CT4	MJD32CT4-A	MJD32CT4G	MJD32CTF	MJD32CTF_NBDD002	MJD32CTM	MJD32RLG	MJD32T4	MJD32T4G
IC package	Package	DPak, TO-252 (2 leads+tab), SC-63
Manufacturer	Manufacturer	STMicroelectronics	ON Semiconductor	ON Semiconductor	ON Semiconductor	STMicroelectronics	STMicroelectronics	ON Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
Type of mounting a component on a board/circuit	Mount	Surface mount
Continuous collector current	I_C	<3 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<100 V	<100 V	<100 V	<100 V	<100 V	<100 V	<100 V	<100 V	<100 V	<100 V	<40 V	<40 V	<40 V
Constant power dissipated on the transistor collector	P_C	<15 W	<15 W	<15 W	<15 W	<15 W	<15 W	<15 W	<1.56 W	<1.56 W	<1.56 W	<15 W	<15 W	<15 W
Static current transfer coefficient of bipolar transistor	hFE	>10Ic, Vce = 3A, 4V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<1.2 VIb, Ic = 375mA, 3A
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	(not set)	<3 MHz	<3 MHz	<3 MHz	<3 MHz	(not set)	<3 MHz	<3 MHz	<3 MHz	<3 MHz	<3 MHz	<3 MHz	<3 MHz
Bipolar transistor structure	Structure	PNP
Collector cutoff current	I_frc	<50 µA