MJD31C

MJD31, MJD31C, MJD31C1, MJD31C1G, MJD31CG, MJD31CITU, MJD31CRL, MJD31CRLG, MJD31CT4, MJD31CT4-A, MJD31CT4G, MJD31CTF, MJD31CTF_NBDD001, MJD31CTF_SBDD001A, MJD31T4, MJD31T4G

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Description

Parameters

ParameterMJD31CMJD31C1MJD31C1GMJD31CGMJD31CITUMJD31CRLMJD31CRLGMJD31CT4MJD31CT4-AMJD31CT4GMJD31CTFMJD31CTF_NBDD001MJD31CTF_SBDD001AMJD31T4MJD31T4G
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63IPak, TO-251, DPak, VPak (3 straight leads + tab)IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
STMicroelectronicsON SemiconductorON SemiconductorON SemiconductorFairchild SemiconductorON SemiconductorON SemiconductorSTMicroelectronicsSTMicroelectronicsON SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mountThrough-holeThrough-holeSurface mountThrough-holeSurface mountSurface mountSurface mountSurface mountSurface mountSurface mountSurface mountSurface mountSurface mountSurface mount
Continuous collector current
IC
<3 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V<100 V<100 V<100 V<100 V<100 V<100 V<100 V<100 V<100 V<100 V<100 V<100 V<40 V<40 V
Constant power dissipated on the transistor collector
PC
<15 W<15 W<15 W<15 W<1.56 W<15 W<15 W<15 W<15 W<15 W<1.56 W<1.56 W<1.56 W<15 W<15 W
Static current transfer coefficient of bipolar transistor
hFE
>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V>25Ic, Vce = 1A, 4V>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V>10Ic, Vce = 3A, 4V
Saturation voltage between collector and emitter of transistor
UCE-sat
<1.2 VIb, Ic = 375mA, 3A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
(not set)<3 MHz<3 MHz<3 MHz<3 MHz<3 MHz<3 MHz<3 MHz(not set)<3 MHz<3 MHz<3 MHz<3 MHz<3 MHz<3 MHz
Bipolar transistor structure
Structure
NPN
Collector cutoff current
Ifrc
<50 µA<50 µA<50 µA<50 µA<20 µA<50 µA<50 µA<50 µA<50 µA<50 µA<20 µA<50 µA<50 µA<50 µA<50 µA