MJD2955-1G

MJD2955, MJD2955-001, MJD2955-1G, MJD2955G, MJD2955T4, MJD2955T4G, MJD2955TF

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Description

Parameters

ParameterMJD2955-001MJD2955-1GMJD2955GMJD2955T4MJD2955T4GMJD2955TF
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63, IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63, IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63, DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63, DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63, DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63, DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeSurface mountSurface mountSurface mountSurface mount
Continuous collector current
IC
<10 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Constant power dissipated on the transistor collector
PC
<20 W<20 W<20 W<20 W<20 W<1.75 W
Static current transfer coefficient of bipolar transistor
hFE
>20Ic, Vce = 4A, 4V
Saturation voltage between collector and emitter of transistor
UCE-sat
<1.1 VIb, Ic = 400mA, 4A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<2 MHz
Bipolar transistor structure
Structure
PNPPNPPNPNPNPNPPNP
Collector cutoff current
Ifrc
<50 µA