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| Parameter | MJD253-001 | MJD253-1G | MJD253T4 | MJD253T4G | |
|---|---|---|---|---|---|
IC package | Package | IPak, TO-251, DPak, VPak (3 straight leads + tab) | IPak, TO-251, DPak, VPak (3 straight leads + tab) | DPak, TO-252 (2 leads+tab), SC-63 | DPak, TO-252 (2 leads+tab), SC-63 |
Manufacturer | Manufacturer | ON Semiconductor | |||
Type of mounting a component on a board/circuit | Mount | Through-hole | Through-hole | Surface mount | Surface mount |
Continuous collector current | IC | <4 A | |||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <100 V | |||
Constant power dissipated on the transistor collector | PC | <12.5 W | |||
Static current transfer coefficient of bipolar transistor | hFE | >40Ic, Vce = 200mA, 1V | |||
Saturation voltage between collector and emitter of transistor | UCE-sat | <300 mVIb, Ic = 50mA, 500mA | |||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <40 MHz | |||
Bipolar transistor structure | Structure | PNP | |||