MJD200G

MJD200, MJD200G, MJD200RL, MJD200RLG, MJD200T4, MJD200T4G, MJD200T5G

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Description

Parameters

ParameterMJD200GMJD200RLMJD200RLGMJD200T4MJD200T4GMJD200T5G
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<5 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<25 V
Constant power dissipated on the transistor collector
PC
<12.5 W<12.5 W<12.5 W<12.5 W<12.5 W<1.4 W
Static current transfer coefficient of bipolar transistor
hFE
>45Ic, Vce = 2A, 1V>45Ic, Vce = 2A, 1V>70Ic, Vce = 500mA, 1V>45Ic, Vce = 2A, 1V>45Ic, Vce = 2A, 1V>45Ic, Vce = 2A, 1V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 50mA, 500mA<300 mVIb, Ic = 50mA, 500mA<1.8 VIb, Ic = 1A, 5A<300 mVIb, Ic = 50mA, 500mA<300 mVIb, Ic = 50mA, 500mA<750 mVIb, Ic = 200mA, 2A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<65 MHz
Bipolar transistor structure
Structure
NPN