MJD122T4

MJD122, MJD122G, MJD122T4, MJD122T4G, MJD122TF

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Description

Parameters

ParameterMJD122GMJD122T4MJD122T4GMJD122TF
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON SemiconductorSTMicroelectronicsON SemiconductorFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<8 A<5 A<8 A<8 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V
Constant power dissipated on the transistor collector
PC
<20 W<20 W<20 W<1.75 W
Static current transfer coefficient of bipolar transistor
hFE
>1000Ic, Vce = 4A, 4V
Saturation voltage between collector and emitter of transistor
UCE-sat
<2 VIb, Ic = 16mA, 4A<2 VIb, Ic = 16mA, 4A<2 VIb, Ic = 15mA, 4A<2 VIb, Ic = 16mA, 4A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<4 MHz
Bipolar transistor structure
Structure
NPN Darlington
Collector cutoff current
Ifrc
<10 µA