MJD117-001

MJD117, MJD117-001, MJD117-1G, MJD117G, MJD117RLG, MJD117T4, MJD117T4G, MJD117TF

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Description

Parameters

ParameterMJD117-001MJD117-1GMJD117GMJD117RLGMJD117T4MJD117T4GMJD117TF
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63, IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63, IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63, DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63, DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63, DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63, DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63, DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON SemiconductorON SemiconductorON SemiconductorON SemiconductorSTMicroelectronicsON SemiconductorFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeSurface mountSurface mountSurface mountSurface mountSurface mount
Continuous collector current
IC
<2 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V
Constant power dissipated on the transistor collector
PC
<20 W<20 W<20 W<20 W<20 W<20 W<1.75 W
Static current transfer coefficient of bipolar transistor
hFE
>1000Ic, Vce = 2A, 3V
Saturation voltage between collector and emitter of transistor
UCE-sat
<2 VIb, Ic = 8mA, 2A<2 VIb, Ic = 8mA, 2A<2 VIb, Ic = 8mA, 2A<2 VIb, Ic = 8mA, 2A<2 VIb, Ic = 8A, 2A<2 VIb, Ic = 8mA, 2A<3 VIb, Ic = 40mA, 4A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<25 MHz
Bipolar transistor structure
Structure
PNP Darlington
Collector cutoff current
Ifrc
<20 µA