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| Parameter | MBT35200MT1 | MBT35200MT1G | MBT35200MT2G | |
|---|---|---|---|---|
IC package | Package | 6-TSOP | ||
Manufacturer | Manufacturer | ON Semiconductor | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Continuous collector current | IC | <2 A | ||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <35 V | ||
Constant power dissipated on the transistor collector | PC | <625 mW | <1.75 W | <625 mW |
Static current transfer coefficient of bipolar transistor | hFE | >100Ic, Vce = 1.5A, 1.5V | >100Ic, Vce = 1A, 1.5V | >100Ic, Vce = 1.5A, 1.5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <310 mVIb, Ic = 20mA, 2A | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <100 MHz | ||
Bipolar transistor structure | Structure | PNP | ||
Collector cutoff current | Ifrc | <100 nA | ||