KSH112GTM

KSH112, KSH112GTM, KSH112GTM_NB82051, KSH112GTM_SB82051, KSH112ITU, KSH112TF, KSH112TM

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Description

Parameters

ParameterKSH112GTMKSH112GTM_NB82051KSH112GTM_SB82051KSH112ITUKSH112TFKSH112TM
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mountSurface mountSurface mountThrough-holeSurface mountSurface mount
Continuous collector current
IC
<2 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V
Constant power dissipated on the transistor collector
PC
<1.75 W
Static current transfer coefficient of bipolar transistor
hFE
>1000Ic, Vce = 2A, 3V
Saturation voltage between collector and emitter of transistor
UCE-sat
<3 VIb, Ic = 40mA, 4A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<25 MHz
Bipolar transistor structure
Structure
NPN Darlington
Collector cutoff current
Ifrc
<20 µA