KSC945CGTA

KSC945CGTA

KSC945, KSC945CGBU, KSC945CGTA, KSC945CLTA, KSC945COTA, KSC945CYBU, KSC945CYTA, KSC945GBU, KSC945GTA, KSC945LBU, KSC945LTA, KSC945OBU, KSC945OTA, KSC945YBU, KSC945YTA

NPN Epitaxial Silicon transistor

Description

NPN Epitaxial Silicon transistor. Complementary to KSA733.

Features:

  • Audio Frequency Amplifier and High-Frequency OSC
  • High Current Gain Bandwith Product: 300 MHz (Typical)

Marking

Transistors marked as C945. Suffic "-C" means Center Collector (1. Emitter, 2. Collector, 3. Base)

Parameters

ParameterKSC945CGBUKSC945CGTAKSC945CLTAKSC945COTAKSC945CYBUKSC945CYTAKSC945GBUKSC945GTAKSC945LBUKSC945LTAKSC945OBUKSC945OTAKSC945YBUKSC945YTA
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<150 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<250 mW
Static current transfer coefficient of bipolar transistor
hFE
>200Ic, Vce = 1mA, 6V>200Ic, Vce = 1mA, 6V>350Ic, Vce = 1mA, 6V>70Ic, Vce = 1mA, 6V>120Ic, Vce = 1mA, 6V>120Ic, Vce = 1mA, 6V>200Ic, Vce = 1mA, 6V>200Ic, Vce = 1mA, 6V>350Ic, Vce = 1mA, 6V>350Ic, Vce = 1mA, 6V>70Ic, Vce = 1mA, 6V>70Ic, Vce = 1mA, 6V>120Ic, Vce = 1mA, 6V>120Ic, Vce = 1mA, 6V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<300 MHz
Bipolar transistor structure
Structure
NPN