NPN Epitaxial Silicon transistor. Complementary to KSA733.
Features:
Transistors marked as C945. Suffic "-C" means Center Collector (1. Emitter, 2. Collector, 3. Base)
| Parameter | KSC945CGBU | KSC945CGTA | KSC945CLTA | KSC945COTA | KSC945CYBU | KSC945CYTA | KSC945GBU | KSC945GTA | KSC945LBU | KSC945LTA | KSC945OBU | KSC945OTA | KSC945YBU | KSC945YTA | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | TO-92-3 (Standard Body), TO-226 | |||||||||||||
Manufacturer | Manufacturer | Fairchild Semiconductor | |||||||||||||
Type of mounting a component on a board/circuit | Mount | Through-hole | |||||||||||||
Continuous collector current | IC | <150 mA | |||||||||||||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | |||||||||||||
Constant power dissipated on the transistor collector | PC | <250 mW | |||||||||||||
Static current transfer coefficient of bipolar transistor | hFE | >200Ic, Vce = 1mA, 6V | >200Ic, Vce = 1mA, 6V | >350Ic, Vce = 1mA, 6V | >70Ic, Vce = 1mA, 6V | >120Ic, Vce = 1mA, 6V | >120Ic, Vce = 1mA, 6V | >200Ic, Vce = 1mA, 6V | >200Ic, Vce = 1mA, 6V | >350Ic, Vce = 1mA, 6V | >350Ic, Vce = 1mA, 6V | >70Ic, Vce = 1mA, 6V | >70Ic, Vce = 1mA, 6V | >120Ic, Vce = 1mA, 6V | >120Ic, Vce = 1mA, 6V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <300 mVIb, Ic = 10mA, 100mA | |||||||||||||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <300 MHz | |||||||||||||
Bipolar transistor structure | Structure | NPN | |||||||||||||