KSB1116

KSB1116, KSB1116AGBU, KSB1116AGTA, KSB1116ALBU, KSB1116ALTA, KSB1116AYBU, KSB1116AYTA, KSB1116GBU, KSB1116GTA, KSB1116LBU, KSB1116LTA, KSB1116SYBU, KSB1116SYTA, KSB1116YBU, KSB1116YTA

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Description

Parameters

ParameterKSB1116AGBUKSB1116AGTAKSB1116ALBUKSB1116ALTAKSB1116AYBUKSB1116AYTAKSB1116GBUKSB1116GTAKSB1116LBUKSB1116LTAKSB1116SYBUKSB1116SYTAKSB1116YBUKSB1116YTA
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V<60 V<60 V<60 V<60 V<60 V<50 V<50 V<50 V<50 V<50 V<50 V<50 V<50 V
Constant power dissipated on the transistor collector
PC
<750 mW
Static current transfer coefficient of bipolar transistor
hFE
>200Ic, Vce = 100mA, 2V>200Ic, Vce = 100mA, 2V>300Ic, Vce = 100mA, 2V>300Ic, Vce = 100mA, 2V>135Ic, Vce = 100mA, 2V>135Ic, Vce = 100mA, 2V>200Ic, Vce = 100mA, 2V>200Ic, Vce = 100mA, 2V>300Ic, Vce = 100mA, 2V>300Ic, Vce = 100mA, 2V>135Ic, Vce = 100mA, 2V>135Ic, Vce = 100mA, 2V>135Ic, Vce = 100mA, 2V>135Ic, Vce = 100mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 50mA, 1A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<120 MHz
Bipolar transistor structure
Structure
PNP