IMBT3905

IMBT3905, IMBT3905DI

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Description

Parameters

ParameterIMBT3905DI
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
Diodes Inc
Type of mounting a component on a board/circuit
Mount
Surface mount
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<40 V
Constant power dissipated on the transistor collector
PC
<350 mW
Static current transfer coefficient of bipolar transistor
hFE
>50Ic, Vce = 10mA, 1V
Saturation voltage between collector and emitter of transistor
UCE-sat
<400 mVIb, Ic = 5mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Bipolar transistor structure
Structure
PNP