BU508AF

BU508, BU508A, BU508AF, BU508AFI, BU508AFTBTU, BU508AW

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterBU508ABU508AFBU508AFIBU508AFTBTUBU508AW
IC package
Package
TO-247-3ISOWATT218FXISOWATT-218-3TO-3PF-3TO-247
Manufacturer
Manufacturer
STMicroelectronicsSTMicroelectronicsSTMicroelectronicsFairchild SemiconductorSTMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<8 A<15 A<8 A<5 A<8 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<700 V
Constant power dissipated on the transistor collector
PC
<150 W<50 W<150 W<60 W<125 W
Static current transfer coefficient of bipolar transistor
hFE
(not set)>10Ic, Vce = 100mA, 5V>10Ic, Vce = 100mA, 5V>2.25Ic, Vce = 4.5A, 5V>10Ic, Vce = 100mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<1 VIb, Ic = 2A, 4.5A<1 VIb, Ic = 1.6A, 4.5A<1 VIb, Ic = 2A, 4.5A<1 VIb, Ic = 2A, 4.5A<1 VIb, Ic = 1.6A, 4.5A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<7 MHz(not set)<7 MHz(not set)(not set)
Bipolar transistor structure
Structure
NPN
Collector cutoff current
Ifrc
<1 mA<200 µA<1 mA<1 mA<200 µA