BSV52,215

BSV52, BSV52,215, BSV52_D87Z, BSV52LT1, BSV52LT1G

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Description

Parameters

ParameterBSV52,215BSV52_D87ZBSV52LT1BSV52LT1G
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
NXP SemiconductorsFairchild SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA<200 mA<100 mA<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<12 V
Constant power dissipated on the transistor collector
PC
<250 mW<225 mW<300 mW<300 mW
Static current transfer coefficient of bipolar transistor
hFE
>25Ic, Vce = 1mA, 1V>40Ic, Vce = 10mA, 1V>40Ic, Vce = 10mA, 1V>25Ic, Vce = 1mA, 1V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 10mA, 1mA<400 mVIb, Ic = 5mA, 50mA<300 mVIb, Ic = 300µA, 10mA<400 mVIb, Ic = 5mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<500 MHz<400 MHz<400 MHz<400 MHz
Bipolar transistor structure
Structure
NPN