BSP52,115

BSP52, BSP52,115, BSP52E6327, BSP52T1, BSP52T1G, BSP52T3, BSP52T3G

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Description

Parameters

Parameter		BSP52,115	BSP52E6327	BSP52T1	BSP52T1G	BSP52T3	BSP52T3G
IC package	Package	SOT-223 (3 leads + Tab), SC-73, TO-261AA
Manufacturer	Manufacturer	NXP Semiconductors	Infineon Technologies	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
Type of mounting a component on a board/circuit	Mount	Surface mount
Continuous collector current	I_C	<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<80 V
Constant power dissipated on the transistor collector	P_C	<1.25 W	<1.5 W	<800 mW	<800 mW	<800 mW	<800 mW
Static current transfer coefficient of bipolar transistor	hFE	>1000Ic, Vce = 150mA, 10V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<1.3 VIb, Ic = 500µA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<200 MHz	<200 MHz	(not set)	(not set)	(not set)	(not set)
Bipolar transistor structure	Structure	NPN Darlington
Collector cutoff current	I_frc	<50 nA	<10 µA	<10 µA	<10 µA	<10 µA	<10 µA