BF423,112

BF423, BF423,112, BF423,116, BF423G, BF423ZL1, BF423ZL1G

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Description

Parameters

ParameterBF423,112BF423,116BF423GBF423ZL1BF423ZL1G
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
NXP SemiconductorsNXP SemiconductorsON SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<50 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<250 V
Constant power dissipated on the transistor collector
PC
<830 mW
Static current transfer coefficient of bipolar transistor
hFE
>50Ic, Vce = 25mA, 20V
Saturation voltage between collector and emitter of transistor
UCE-sat
<600 mVIb, Ic = 5mA, 30mA<600 mVIb, Ic = 5mA, 30mA<500 mVIb, Ic = 2mA, 20mA<500 mVIb, Ic = 2mA, 20mA<500 mVIb, Ic = 2mA, 20mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<60 MHz
Bipolar transistor structure
Structure
PNP